·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±30 V ID Dr.
Current VDS=700V; VGS= 0 2SK2389 MIN TYPE MAX UNIT 700 V 1.5 3.5 V 1.7 Ω ±100 nA 500 µA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical fi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2380 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2381 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2382 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK2383 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2385 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2386 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK2388 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK2388 |
Toshiba |
Silicon N-Channel MOSFET | |
9 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2313 |
INCHANGE |
N-Channel MOSFET |