2SK2380 - Panasonic Semiconductor

2SK2380 Silicon N-Channel MOSFET

Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magaz.

Features

V mS pF pF pF 1 Silicon Junction FETs (Small Signal) PD  Ta 150 240 Ta=25˚C 125 200 200 VGS=0.4V 2SK2380 ID  VDS 240 VDS=10V ID  VGS Allowable power dissipation PD (mW) Drain current ID (µA) 100 160 Drain current ID (µA) 160 75 120 0.2V 0V 120 50 80
  – 0.2V
  – 0.4V 80 25 40
  – 0.6V 40 Ta=75˚C
  –25˚C
  – 0.8
  – 0.4 25˚C 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0
  –1.2 0 0.4 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs |  VGS 1.2 | Yfs |  ID Forward transfer admittance |Yfs| (mS) VDS=10V f=1kHz Ta=25˚C C.