2SK2145 - Toshiba Semiconductor

2SK2145 Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz.

Features

gnificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 1 2007-11-01 2SK2145 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Gate-leakage current Gate-drain breakdown vol.