Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gat.
SS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS= 2.0A;VGS= 0 VGS= 10V; ID= 1A VGS= ±25V;VDS= 0 VDS= 500V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz ID=1A; VDD=10V; RL=30Ω MIN TYPE MAX UNIT 600 V 2.0 3.0 V 0.9 V 3.8 5.0 Ω ±10 µA 250 µA 295 12 pF 70 25 8 ns 30 65 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification..
2SK2144 - Hitachi Semiconductor
2SK2144 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK214 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | 2SK214 |
Renesas Technology |
N-Channel MOSFET |
|
| 3 | 2SK2140 |
NEC |
N-Channel Power MOSFET |
|
| 4 | 2SK2140-Z |
NEC |
N-Channel Power MOSFET |
|
| 5 | 2SK2141 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |
|
| 6 | 2SK2142 |
Sanyo |
N-Channel Silicon MOSFET |
|
| 7 | 2SK2145 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | 2SK2146 |
Toshiba |
Transistor |
|
| 9 | 2SK2146 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK2147-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2SK2147-01 |
Fuji Semiconductors |
N-Channel Silicon Power MOSFET |
|
| 12 | 2SK2147-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|