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The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES 10.0 ± 0.3 • • • • φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A) 15.0 ± 0.3 LOW Ciss Ciss = 1150 pF TYP. 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanch.
10.0 ± 0.3
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•
•
•
φ3.2 ± 0.2
4.5 ± 0.2 2.7 ± 0.2
Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A)
15.0 ± 0.3
LOW Ciss
Ciss = 1150 pF TYP.
3 ± 0.1 1 2 3 4 ± 0.2
High Avalanche Capability Ratings Isolated TO-220 (MP-45F) Package
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
VDSS VGSS ID (DC) ID (pulse)
*
600 ± 30 ± 6.0 ± 24 35 2.0
–55 to +150 150 6.0 12
V V A A W W °C °C A mJ
1 2 3 2.54 TYP. 0.7 ± 0.1
13.5 MIN. 0.65 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissip.
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|---|---|---|---|---|
| 1 | 2SK214 |
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| 2 | 2SK214 |
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| 3 | 2SK2140 |
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| 4 | 2SK2140-Z |
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| 5 | 2SK2142 |
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| 6 | 2SK2144 |
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| 7 | 2SK2144 |
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| 8 | 2SK2145 |
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| 10 | 2SK2146 |
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| 11 | 2SK2147-01 |
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| 12 | 2SK2147-01 |
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