2SK1876 - Inchange Semiconductor

2SK1876 N-Channel MOSFET Transistor

·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Fast Switching Speed ·Low on-resistance ·For switchinggregulator,DC-DC Converter ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou.

Features

S Drain-Source Breakdown Voltage VGS= 0; ID= 1mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VDF Body to drain diode forward voltage IS= 5A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; VGS=0V; fT=1MHz tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time VGS=10V; ID=2.5A; VDD=200V; RL=12Ω 2S.