2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1807 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc.
•
•
•
•
• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1807
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 900 ±30 4 10 4 60 150
–55 to +1.
2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc.
·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK180 |
Yoshino International |
Power FET | |
2 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET | |
4 | 2SK1805 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1805 |
Toshiba |
Field Effect Transistor | |
6 | 2SK1808 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SK1809 |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SK1809 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor | |
10 | 2SK181 |
Yoshino International |
(2SK180 - 2SK183) Power FET | |
11 | 2SK1813 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK1815 |
Fuji Semiconductors |
N-Channel Silicon Power MOSFET |