2SK1712 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 10 ± 15 ± 60 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) 1.0 5.6 8.4 0.12 0.07 Ciss Coss t on t off 820 360 100 75 0.14 0.1 min 60 ± 500 250 2.0 Ratings typ max Unit V nA µA .
0 VGS =10V
8 6 TC =
– 55ºC 25ºC 125ºC
VGS = 3V
4 2
4
5
0
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
20 10 TC =
– 55ºC 25ºC 125ºC VDS = 10V 2
VGS — VDS Characteristics
0.17 0.15
TC — RDS (ON) Characteristics
ID = 8A
RDS (ON) (Ω)
Re (yfs) (S)
5
0.13 4V 0.11 0.09 0.07 0.05 VGS =10V
VDS (V)
1
15A
1 ID = 8A 0.5 0.2 0.03 0 0.1 0.5 1 5 10 20 2 5 10
0.03
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
3000 VGS = 0V f = 1MHz 14 12 10
VSD — I DR Characteristics
100 50
Safe Operating Ar.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1710 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK1717 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK1717 |
Rohm |
Transistors | |
4 | 2SK170 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1700 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK1701 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1703 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK1704 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1705 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK1706 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1707 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1708 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |