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·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipa.
S; ID=1mA VGS= 10V; ID= 3A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 MIN MAX UNIT 600 V 2.0 4.0 V 1.3 Ω ±100 nA 1 mA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK1712 |
Sanken electric |
MOSFET |
|
| 2 | 2SK1717 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1717 |
Rohm |
Transistors |
|
| 4 | 2SK170 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1700 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1701 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK1703 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK1704 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK1705 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK1706 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2SK1707 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK1708 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|