·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS .
IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 2SK1707 MIN MAX UNIT 600 V 2.0 4.0 V 2.6 Ω ±100 nA 1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK170 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1700 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK1701 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1703 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1704 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK1705 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1706 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK1708 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1709 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK1710 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1712 |
Sanken electric |
MOSFET | |
12 | 2SK1717 |
Toshiba Semiconductor |
N-Channel MOSFET |