2SK1313 - Hitachi Semiconductor

2SK1313 Silicon N-Channel MOSFET

2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Abso.

Features

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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1313 2SK1314 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Symbo.