2SK1228 - Panasonic Semiconductor

2SK1228 Silicon N-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SK1228 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 s Absolute Maximum Rating.

Features

q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive 0.65±0.15 1.5
  –0.05 +0.25 0.95 2.9
  –0.05 1 1.9±0.2 +0.2 0.95 3 0.4
  –0.05 +0.1 2 s Absolute Maximum Ratings (Ta = 25°C) +0.2 1.1
  –0.1 1.45 Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 10 50 100 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain JEDEC: TO-236 EIAJ: SC-59 Mini Type Package.