·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±2.
Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 6A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 2SK1222 MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 0.55 Ω ±100 nA 500 uA Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1221 |
Fuji Electric |
N-Channel Silicon Power MOS-FET | |
2 | 2SK1224 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK1225 |
ETC |
Silicon N-Channel MOS FET | |
4 | 2SK1228 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK12 |
Toshiba |
Silicon N-Channel Transistor | |
6 | 2SK1200 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1201 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK1202 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK1203 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK1204 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1204 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
12 | 2SK1206 |
ETC |
Silicon N-Channel MOS FET |