2SK1203 - Inchange Semiconductor

2SK1203 N-Channel MOSFET Transistor

·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS G.

Features

0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF=6A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A;RL=10Ω toff Turn-off time 2SK1203 MIN TYP MAX UNIT 900 V 2.0 4.0 V 2.0 3.0 Ω ±10 uA 250 uA 1.0 V 150 ns 165 ns 120 ns 250 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifica.