2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°.
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•
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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1155, 2SK1156
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Symbol VDSS
Ratings 450.
2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 Application H.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1151 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1151L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1151S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1152 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1152L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK1152S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK1153 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK1153 |
Renesas |
Silicon N-Channel MOSFET | |
9 | 2SK1154 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK1154 |
Renesas |
Silicon N-Channel MOSFET | |
11 | 2SK1156 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK1156 |
Renesas |
Silicon N Channel MOSFET |