2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1151(L)(S), 2SK1152(L)(S) Abso.
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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK1151(L)(S), 2SK1152(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1151 2SK1152 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Symbo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1152 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1152S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1151 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1151L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1151S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK1153 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK1153 |
Renesas |
Silicon N-Channel MOSFET | |
8 | 2SK1154 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK1154 |
Renesas |
Silicon N-Channel MOSFET | |
10 | 2SK1155 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1155 |
Renesas |
Silicon N Channel MOSFET | |
12 | 2SK1156 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |