2SK1155 |
Part Number | 2SK1155 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit... |
Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450... |
Document |
2SK1155 Data Sheet
PDF 49.53KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK1151 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1151L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1151S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1152 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1152L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |