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Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Adoption of FBET process. · Ultrasmall-sized package permittin.
· Adoption of FBET process.
· Ultrasmall-sized package permitting 2SK1069-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm 2058
[2SK1069]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
12 0.65 0.65
2.0
0.3 0.6 0.9
0.425
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Vo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK1060 |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 2 | 2SK1060-Z |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 3 | 2SK1061 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 4 | 2SK1062 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 5 | 2SK1063 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1064 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK1065 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 8 | 2SK1066 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 9 | 2SK1067 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK1068 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET |
|
| 11 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 12 | 2SK1006-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|