2SK1061 - Toshiba Semiconductor

2SK1061 N-CHANNEL MOS TRANSISTOR

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK1061 Unit: mm • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 0.6 Ω (typ.) • Enhancement-mode • Complementary to 2S.

Features

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitanc.