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2SK1061 |
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| Part Number | 2SK1061 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK1061 Unit: mm • Excellent switching times: t... |
| Features |
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitanc... |
| Document |
 2SK1061 Data Sheet
PDF 529.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1060 |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 2 | 2SK1060-Z |
NEC |
N-Channel MOS Field Effect Power Transistor |
|
| 3 | 2SK1062 |
Toshiba Semiconductor |
N-CHANNEL MOS TRANSISTOR |
|
| 4 | 2SK1063 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK1064 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|