2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. .
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•
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• Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Source (Flange) 3. Drain
S
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch
* Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg
1
Symbol VDSX
Ratings
–140
–160
–180
–200 ±15
–500
–500 1.75 30 150
–45 to +150
Unit V
V mA .
High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ72 |
Toshiba Semiconductor |
Silicon P-Channel Transistor | |
2 | 2SJ73 |
Toshiba |
Silicon P-Channel Transistor | |
3 | 2SJ74 |
Toshiba Semiconductor |
Silicon P-Channel Transistor | |
4 | 2SJ75 |
Toshiba |
Silicon P-Channel Transistor | |
5 | 2SJ76 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
6 | 2SJ76 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
7 | 2SJ77 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
8 | 2SJ77 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
9 | 2SJ78 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
10 | 2SJ78 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
11 | 2SJ0164 |
Panasonic |
Silicon P-channel FET | |
12 | 2SJ0536 |
Panasonic Semiconductor |
P-Channel MOSFET |