2SJ0536 - Panasonic Semiconductor

2SJ0536 P-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron 0.65 1 .

Features

1 Silicon MOS FETs (Small Signal) PD  Ta 200
  –120 2SJ0536 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=
  –5V 50 Allowable power dissipation PD (mW) 160
  –100 Drain current ID (mA)
  –80 VGS=
  –5.5V
  –60
  –5.0V
  –4.5V
  –40
  –4.0V
  –20
  –3.5V
  –3.0V 40 120 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0
  –2
  –4
  –6
  –8
  –2.5V
  –10
  –12 0 0
  –2
  –4
  –6
  –8
  –10
  –12 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) ID  VGS
  –240 VDS=
  –5V
  –200
  –30
  –100 VIN  IO VO=
  –5V Ta=25˚C Drain current ID (mA)
  –160 Input voltage VIN (V.