2SJ0164 - Panasonic

2SJ0164 Silicon P-channel FET

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Features

• Low ON resistance
• Low-noise characteristics
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Gate-drain surrender voltage Drain current Gate current Power dissipation Channel temperature Storage temperature VGDS ID IG PD Tch Tstg 65 −20 −10 300 150 −55 to +150 Unit V mA mA mW °C °C
■ Package
• Code NS-A1
• Pin Name 1: Source 2: Gate 3: Drain
■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage Drain-source current
* Gate-source cutoff current Gate-source cutoff voltage Mutual conductance Short-circu.