2SJ374 - Inchange Semiconductor

2SJ374 P-Channel MOSFET Transistor

·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE .

Features

NDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -7.5A IGSS Gate Source Leakage Current VGS= -12V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -60V,VGS= 0 VSD Diode Forward Voltage IF=-20A;VGS= 0 2SJ374 MIN MAX UNIT -60 V -1.0 -2 V 0.07 Ω -10 uA -0.1 mA -1.5 V Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for .