2SJ378 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhanceme.
y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characterist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ370 |
Shindengen |
POWER MOSFET | |
2 | 2SJ372 |
Shindengen Electric |
60V SERIES POWER MOSFET | |
3 | 2SJ372 |
Shindengen |
POWER MOSFET | |
4 | 2SJ374 |
Inchange Semiconductor |
P-Channel MOSFET Transistor | |
5 | 2SJ376 |
Inchange Semiconductor |
P-Channel MOSFET Transistor | |
6 | 2SJ377 |
Toshiba Semiconductor |
P-Channel MOSFET | |
7 | 2SJ302 |
NEC |
P-Channel MOSFET | |
8 | 2SJ302-Z |
NEC |
SWITCHING P-CHANNEL POWER MOSFET | |
9 | 2SJ302-ZJ |
Kexin |
P-Channel MOSFET | |
10 | 2SJ303 |
NEC |
P-Channel MOSFET | |
11 | 2SJ304 |
Toshiba Semiconductor |
P-Channel MOSFET | |
12 | 2SJ305 |
Toshiba Semiconductor |
P-Channel MOSFET |