2SJ107 - Toshiba Semiconductor

2SJ107 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package • Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Char.

Features

1C Weight: 0.13 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS VGS = 25 V, VDS = 0 ⎯ ⎯ 1.0 nA V (BR) GDS VDS = 0, IG = 100 μA 25 ⎯ ⎯ .