·With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SB757 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers PINNING PIN 1 2 3 Base Emitter Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO V.
unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1mA; IE=0 IC=10mA; IB=0 IE=0.1mA; IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=40V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=2V 40 MIN 40 40 5 www.datasheet4u.com 2SD847 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE TYP. MAX UNIT V V V 0.8 1.0 10 100 240 V V µA µA Switching times ton ts tf Turn-on t.
·Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD841 |
INCHANGE |
NPN Transistor | |
2 | 2SD841 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SD841 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SD842 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
5 | 2SD843 |
INCHANGE |
NPN Transistor | |
6 | 2SD843 |
Toshiba |
Silicon NPN Transistor | |
7 | 2SD844 |
Toshiba |
NPN Transistor | |
8 | 2SD844 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SD844 |
INCHANGE |
NPN Transistor | |
10 | 2SD845 |
INCHANGE |
NPN Transistor | |
11 | 2SD845 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD845 |
Toshiba |
Silicon NPN Transistor |