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I: . SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES • High Collector Current : I C=7A • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A) • High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754. I5.9MAX Unit in mm 0Z.2±O.2 MAXIMUM RATINGS (Ta=25 °C) CH.
• High Collector Current : I C=7A
• Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A)
• High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754.
I5.9MAX
Unit in mm
0Z.2±O.2
MAXIMUM RATINGS (Ta=25 °C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Emitter Current
Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic
XE
pc
Tj
Tstg
RATING 50 50
5
7
-7
2.5 60
150 -55M.50
UNIT
V V V
A 1. BASE 2. COLLECTOR (HEAT SINK) A S EMITTER
.
2SD844 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V .
2SD844 - SavantIC
·With TO-3P(I) package ·Complement to type 2SB754 ·High collector current :IC=7A ·Low collector saturation voltage ·High.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD841 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD841 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD841 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SD842 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD843 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD843 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SD845 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD845 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD845 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SD845 |
MCC |
NPN Silicon Power Transistors |
|
| 11 | 2SD847 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD847 |
INCHANGE |
NPN Transistor |
|