2SD843 - INCHANGE

2SD843 NPN Transistor

·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.

Features

tage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 100V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 4A; VCE= 1V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time RL= 10Ω, VCC= 30V IB1= IB2= 0.3A MIN TYP. MAX UNIT 80 V 0.25 0.5 V 0.9 1.4 V 5 μA 5 .