2SD5070 Inchange Semiconductor Power Transistor Datasheet, en stock, prix

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2SD5070

Inchange Semiconductor
2SD5070
2SD5070 2SD5070
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Part Number 2SD5070
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(...
Features age IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A; VCE= 5V VECF C-E Diode Forward Voltage fT Current-Gain—Bandwidth Product tf Fall Time w ww s c s .i IF= 2.5A IC= 0.5A; VCE= 10V IC= 2A, IB1= 0.6A; IB2= -1.2A RL= 100Ω; VCC= 200V n c . i m e 8 2.0 V 3 MHz 0.4 μs isc Website:www.iscsemi.cn 2 ...

Document Datasheet 2SD5070 Data Sheet
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