2SD458 - Inchange Semiconductor

2SD458 Silicon NPN Power Transistors

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.

Features

CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICER Collector Cutoff Current VCE= 600V; RBE= 50Ω hFE DC Current Gain IC= 5A; VCE= 5V  hFE Classifications Q R 15-50 6.5-30 2SD458 MIN TYP. MAX UNIT 400 V 5 V 1.5 V 3.0 V 1.0 mA 6.5 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co.