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2SD458 |
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| Part Number | 2SD458 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICER
Collector Cutoff Current
VCE= 600V; RBE= 50Ω
hFE
DC Current Gain
IC= 5A; VCE= 5V
hFE Classifications Q R 15-50 6.5-30 2SD458 MIN TYP. MAX UNIT 400 V 5 V 1.5 V 3.0 V 1.0 mA 6.5 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co... |
| Document |
 2SD458 Data Sheet
PDF 207.43KB |
| Distributor | Stock | Price | Buy |
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