2SD459 - INCHANGE

2SD459 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

Features

ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 ICEO Collector Cutoff Current VCE= 80V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain IC= 3A ; VCE= 5V hFE -2 DC Current Gain Switching times ton Turn-on Time tstg Storage T.