2SD357 - INCHANGE

2SD357 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V .

Features

IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A VBE(on) Base-Emitter On Voltage IC= 0.05; VCE= 4V ICBO Collector Cutoff Current VCB= 25V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.3A; VCE= 4V  hFE Classifications C D E 55-110 90-180 150-300 2SD357 MIN TYP. MAX UNIT 100 V 110 V 5 V 1.0 V 0.7 V 10 μA 1 mA 10 μA 55 300 NOTICE： ISC reserves the rights to make changes of the content herein t.