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2SD357 |
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| Part Number | 2SD357 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... |
| Features |
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A
VBE(on) Base-Emitter On Voltage
IC= 0.05; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.3A; VCE= 4V
hFE Classifications C D E 55-110 90-180 150-300 2SD357 MIN TYP. MAX UNIT 100 V 110 V 5 V 1.0 V 0.7 V 10 μA 1 mA 10 μA 55 300 NOTICE： ISC reserves the rights to make changes of the content herein t... |
| Document |
 2SD357 Data Sheet
PDF 211.52KB |
| Distributor | Stock | Price | Buy |
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