·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For color TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-.
ion voltage Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=4.5 A;IB=2A IC=4.5 A;IB=2A VCB=800V;IE=0 IC=1A ; VCE=5V IC=4A ; VCE=10V 8 3 MIN 700 5 1.0 1.3 10 TYP. MAX UNIT V V V V µA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD350A Fig.2 Outline dimensions 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD350 |
CDIL |
NPN Power Transistor | |
2 | 2SD350 |
INCHANGE |
NPN Transistor | |
3 | 2SD352 |
ETC |
NPN Transistor | |
4 | 2SD352 |
Panasonic Semiconductor |
Si NPN Diffused Junction Mesa Type Transistor | |
5 | 2SD355 |
ETC |
NPN Transistor | |
6 | 2SD356 |
ETC |
NPN Transistor | |
7 | 2SD357 |
INCHANGE |
Silicon NPN Power Transistor | |
8 | 2SD358 |
ETC |
NPN Transistor | |
9 | 2SD359 |
ETC |
(2SD359 / 2SD360) NPN Transistor | |
10 | 2SD30 |
Sanyo Semiconductor |
NPN Transistor | |
11 | 2SD310 |
INCHANGE |
NPN Transistor | |
12 | 2SD311 |
Inchange Semiconductor |
Silicon NPN Power Transistor |