·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB515 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in output stage of 10W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25.
ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 2V hFE-2 DC Current Gain IC= 0.1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V MIN TYP. MAX UNIT 50 V 1.0 V 1.5 V 100 μA 1.0 mA 40 320 35 8 MHz hFE-1 Classifications C D E F 40-80 60-120 100.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD330 |
Sanyo Semicon Device |
NPN Transistor | |
2 | 2SD330 |
INCHANGE |
NPN Transistor | |
3 | 2SD334 |
Panasonic Semiconductor |
Si NPN Transistor | |
4 | 2SD334 |
INCHANGE |
NPN Transistor | |
5 | 2SD338 |
INCHANGE |
NPN Transistor | |
6 | 2SD339 |
INCHANGE |
NPN Transistor | |
7 | 2SD30 |
Sanyo Semiconductor |
NPN Transistor | |
8 | 2SD310 |
INCHANGE |
NPN Transistor | |
9 | 2SD311 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 2SD312 |
INCHANGE |
NPN Transistor | |
11 | 2SD313 |
UTC |
NPN Transistor | |
12 | 2SD313 |
SavantIC |
SILICON POWER TRANSISTOR |