2SD312 - INCHANGE

2SD312 NPN Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

Features

NS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V MIN TYP. M.