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Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features · Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313. Package Dimensions unit:mm 2010C [2SB514/2SD330] ( ) : 2SB514 Specifications Absolute Max.
· Especially suited for use in output stage of 10W AF Power amplifier.
· Complementary pair with the 2SB514 and 2SD313.
Package Dimensions
unit:mm 2010C
[2SB514/2SD330]
( ) : 2SB514
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
.
2SD330 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(M.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD331 |
Sanyo Semicon Device |
Transistor |
|
| 2 | 2SD331 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD334 |
Panasonic Semiconductor |
Si NPN Transistor |
|
| 4 | 2SD334 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD338 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD339 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD30 |
Sanyo Semiconductor |
NPN Transistor |
|
| 8 | 2SD310 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD311 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2SD312 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD313 |
UTC |
NPN Transistor |
|
| 12 | 2SD313 |
SavantIC |
SILICON POWER TRANSISTOR |
|