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2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 1 3 2 1 2, 4 ID 2 kΩ (Typ) 0.5 Ω (Typ) 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD2423 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to.
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
1 3 2
1
2, 4
ID 2 kΩ (Typ) 0.5 Ω (Typ) 3
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SD2423
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: Symbol VCBO VCEO VEBO IC PC
* Tj Tstg ID
1
Ratings 50 50 7 1.5 1 150
–55 to +150 1.5
Unit V V V A W °C °C A
1. When using the ceramic board 0.7 mm thick (1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2420 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2422 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SD2425 |
NEC Electronics |
NPN Silicon Epitaxial Transistor |
|
| 4 | 2SD2426 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SD2428 |
ETC |
NPN Transistor |
|
| 6 | 2SD2400 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2400 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2400A |
Rohm |
Power Transistor |
|
| 9 | 2SD2401 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SD2401 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD2401 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD2402 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|