2SD2420 - Panasonic Semiconductor

2SD2420 Silicon NPN Transistor

Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification I Features • High forward current transfer ratio hFE: 2 000 to 10 000 • Dielectric breakdown voltage of the package: > 5 kV 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C P.

Features

• High forward current transfer ratio hFE: 2 000 to 10 000
• Dielectric breakdown voltage of the package: > 5 kV 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 8 4 40 2.0 150 −55 to +150 °C °C Unit V V V A A W 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2.