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Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington 7.0±0.3 3.5±0.2 Unit: mm For power amplification and switching 7.2±0.3 0.8±0.2 3.0±0.2 1.0±0.2 M Di ain sc te on na tin nc ue e/ d q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. +0..
1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4 1 3 Ratings Unit V V V A A 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 0 to 0.15 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature PC Tj Tstg s Electrical Characteristics (TC=25˚C) Parameter Symbol ICBO IEBO hFE1 Collector cutoff current Emitter cutoff current Collector to emitter voltage ea s.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD220 |
Sanken |
NPN Transistor |
|
| 2 | 2SD2200 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD2201 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SD2202 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SD2203 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD2204 |
Toshiba Semiconductor |
NPN Transistor |
|
| 7 | 2SD2206 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD221 |
Sanken |
NPN Transistor |
|
| 9 | 2SD2210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 10 | 2SD2211 |
Rohm |
Power Transistor |
|
| 11 | 2SD2212 |
Rohm |
Medium Power Transistor |
|
| 12 | 2SD2213 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|