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2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Rating.
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD2206 Characteristics Collector cut-off current Emitter cut-off current Collector- emitt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD220 |
Sanken |
NPN Transistor |
|
| 2 | 2SD2200 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD2201 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SD2202 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SD2203 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD2204 |
Toshiba Semiconductor |
NPN Transistor |
|
| 7 | 2SD2209 |
Panasonic |
Silicon NPN Transistor |
|
| 8 | 2SD221 |
Sanken |
NPN Transistor |
|
| 9 | 2SD2210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 10 | 2SD2211 |
Rohm |
Power Transistor |
|
| 11 | 2SD2212 |
Rohm |
Medium Power Transistor |
|
| 12 | 2SD2213 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|