2SD218 - Inchange Semiconductor

2SD218 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low saturation voltage ·Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO.

Features

mitter Saturation Voltage IC= 7A; IB= 0.7A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V fT Current-Gain—Bandwidth Product  hFE-1Classifications M L K IC= 0.2A; VCE= 10V 30-60 45-90 60-120 2SD218 MIN TYP. MAX UNIT 0.6 1.5 V 1.2 1.5 V 0.5 mA 0.5 mA 30 60 120 20 40 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a .