2SD2047 - INCHANGE

2SD2047 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO .

Features

SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A ICBO Collector Cutoff Current VCB= 750V ; IE= 0 VCB= 1500V ; IE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V 2SD2047 MIN TYP. MAX UNIT 700 V 1500 V 10 V 2.0 V 1.5 V 50 μA 1.0 mA 18 50 Notice： ISC reserves the rights to make changes of the conten.