·With TO-220Fa package www.datasheet4u.com ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD2000 Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Col.
aturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=25mA , IB=0 IC=4A;IB=0.4A IC=4A;IB=0.4A VCB=80V;IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=4A ; VCE=4V IC=0.2A; VCE=12V;f=10MHz 70 20 80 MHz MIN 60 1.5 2.0 100 100 250 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton ts tf Turn-on time Storage time Fall time IC=4A ;IB1=0.4A IB2=-0.4A;VCC=50V 0.3 1.0 0.2 µs µs µs hFE-1 Classifications Q 70-150 P 120-250 2 SavantIC Semiconductor Product Specification Silicon NPN.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High Speed Switching ·Good Linearity of hFE ·High Collector.
Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD200 |
INCHANGE |
NPN Transistor | |
2 | 2SD200 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SD2001 |
INCHANGE |
NPN Transistor | |
4 | 2SD2005 |
ROHM |
NPN Transistor | |
5 | 2SD2006 |
Rohm |
NPN Transistor | |
6 | 2SD2008 |
Rohm |
1.2W PACKAGE POWER TRANSISTOR | |
7 | 2SD2009 |
ROHM |
NPN Transistor | |
8 | 2SD201 |
INCHANGE |
NPN Transistor | |
9 | 2SD201 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD2010 |
ROHM |
NPN Transistor | |
11 | 2SD2012 |
Toshiba Semiconductor |
NPN Transistor | |
12 | 2SD2012 |
STMicroelectronics |
NPN Silicon Power Transistor |