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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid,motor and general purpose applications. ABSO.
ess otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 50 MHz COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 70 pF Switching times ton Turn-on Tim.
2SD2045 - Sanken electric
Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 1.
2SD2045 - SeCoS
Elektronische Bauelemente 2SD2045 NPN - PNP Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of “-C” sp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2041 |
Rohm |
TAPED POWER TRANSISTOR |
|
| 2 | 2SD2046 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2047 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2047R |
Fuji Electric |
Power Transistor |
|
| 5 | 2SD2048 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor |
|
| 6 | 2SD2049 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor |
|
| 7 | 2SD200 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD200 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2000 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD2000 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD2000 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD2001 |
INCHANGE |
NPN Transistor |
|