Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SB1322A I Features • Low collector to emitter saturation voltage VCE(sat) • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 .
• Low collector to emitter saturation voltage VCE(sat)
• Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A
• Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45−0.05
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
* Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating 60 50 5 1.5 1 1 150 −55 to +150
Unit V V V A A W °C °C
1.2±0.1 0.65 max.
0.1 0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1990 |
Panasonic |
Silicon NPN Triple Diffused Planar Transistor |
|
| 2 | 2SD1991A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD1992A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1993 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1995 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1996 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD1996 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SD1997 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 9 | 2SD1998 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1999 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Transistors |
|
| 11 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 12 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|