Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05 0.45–0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector pow.
0.15 0.7 4.0 0.8 Unit µA µA V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF FE1 Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC — Ta 500 60 Ta=25˚C IB=160µA 50 1000 2SD1991A IC — VCE 1200 VCE=10V Ta=25˚C IB — VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 40 Base current IB (µA) 140µA 120µA 100µA 30 80µA 20 60µA 40µA 10 20µA 800 300 600 200 400 100 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter v.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1990 |
Panasonic |
Silicon NPN Triple Diffused Planar Transistor |
|
| 2 | 2SD1992A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD1993 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1994A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1995 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1996 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD1996 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SD1997 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 9 | 2SD1998 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1999 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Transistors |
|
| 11 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 12 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|