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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO.
R)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 100μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 3V hFE-2 DC Current Gain IC= 100mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 100mA ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 2SD1966 MIN TYP. MAX UNIT 80 V 80 V 5 V 0.4 V .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1960 |
Rohm |
NPN Silicon Transistor |
|
| 2 | 2SD1961 |
ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
|
| 3 | 2SD1962M |
ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
|
| 4 | 2SD1963 |
Rohm |
Power Transistor |
|
| 5 | 2SD1963 |
Kexin |
Power Transistor |
|
| 6 | 2SD1964 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 8 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 11 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 12 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|